IXGH12N60CD1 igbt equivalent, igbt.
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Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s
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Very high frequency IGBT New generation HDMOSTM process International standard pac.
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BVCES VGE(th) ICES IGES VCE(sat)
IC IC
= 250 µA, VGE = 0 V = 250 µA, VGE = VGE
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VCE = 0.8 VCES VGE = 0 V VCE.
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